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| SII100N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol RthJC RthJCD o TC = 25oC, unless otherwise specified Conditions Values 1200 145(100) 290(200) _ +20 700 _ 40...+125(150) 2500 _ 0.18 < o Units V A A V W C TC= 25(80) C TC= 25(80)oC, tP =1ms _ TOPERATION < Tstg AC, 1min V K/W _ < 0.36 Sirectifier R SII100N12 NPT IGBT Modules Electeical Characteristics Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =4mA ICES VGE = 0; VCE = 1200V; Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =100A; VGE = 15V; Tj = 25(125)oC; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres gfs VCE=20V, IC=100A Switching Characteristics td(on) VCC = 600V, IC = 100A tr RGon = RGoff =6.8 , Tj = 125oC td(off) VGE = 15V tf FWD under following conditions: VF IF = 100A, VGE = 0V, Tj = 25(125)oC trr IF=100A, VR= _600V,VGE=0V,di/dt=_ 1000A/us,Tj = 125oC _ IF = 100A, VGE = 0V, VR= 600V Qrr _1000A/us, Tj = 25(125)oC di/dt= Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 1.5(6) 2.5(3.1) 6.5 1 0.5 54 max. 6.5 2 400 3(3.7) Units V mA nA V nF S 130 80 400 70 2.3(1.8) 0.3 4(14) 260 160 600 100 2.8 ns V us uC Mechanical Data 5 5 160 Nm Nm g Sirectifier R SII100N12 NPT IGBT Modules Power dissipation Ptot = (TC) parameter: Tj 150 C 750 W 650 Ptot 600 550 100 s Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 t = 16.0s p A IC 10 2 500 450 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 C 160 10 -1 0 10 10 0 DC 10 ms 10 1 1 ms 10 1 10 2 10 3 V TC VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 150 A 130 IC 120 110 100 90 80 70 60 50 40 30 20 10 0 0 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT K/W ZthJC 10 -1 10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01 20 40 60 80 100 120 C 160 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Sirectifier R SII100N12 NPT IGBT Modules T yp. output c harac teris tic s I C = f (V C E ) parameter: tp = 80 s , T j = 25 C 200 A T yp. output c harac teris tic s I C = f (V C E ) parameter: tp = 80 s , T j = 125 C 200 A IC 160 140 120 100 80 60 40 20 0 0 17V 15V 13V 11V 9V 7V IC 160 140 120 100 80 60 40 20 0 17V 15V 13V 11V 9V 7V 1 2 3 V 5 0 1 2 3 V 5 VC E VCE T yp. trans fer c harac teris tic s I C = f (V G E ) parameter: tp = 80 s , V C E = 20 V 200 A IC 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 V 14 VGE Sirectifier R SII100N12 NPT IGBT Modules Typ. gate charge VGE = (QGate) parameter: IC puls = 100 A 20 V nF VGE 16 14 12 10 8 10 0 6 4 2 0 0 100 200 300 400 500 nC 700 10 -1 0 600 V 800 V T yp. c apac itanc es C = f (V C E ) parameter: V G E = 0 V , f = 1 MHz 10 2 C 10 1 C is s C os s C rs s 5 10 15 20 25 30 QGate V VCE 40 R evers e bias ed s afe operating area I C puls = f(V C E ) , T j = 150C parameter: V G E = 15 V 2.5 S hort c irc uit s afe operating area I C s c = f(V C E ) , T j = 150C parameter: V G E = 15 V , tS C 10 s , L < 50 nH 12 IC puls /I C IC sc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 200 400 600 800 1000 1200 V 1600 VC E 0 0 200 400 600 800 1000 1200 V 1600 VC E Sirectifier R SII100N12 NPT IGBT Modules T yp. s witc hing time I = f (IC ) , inductive load , T j = 125C par.: V C E = 600 V , V G E = 15 V , R G = 6.8 10 3 T yp. s witc hing time t = f (R G ) , inductive load , T j = 125C par.: V C E = 600 V , V G E = 15 V , I C = 100 A 10 4 ns t tdoff ns t 10 3 tdoff tdon tr 10 2 tf 10 2 tdon tr tf 10 1 0 50 100 150 A 250 10 1 0 10 20 30 40 IC 60 RG T yp. s witc hing los s es E = f (IC ) , inductive load , T j = 125C par.: V C E = 600 V , V G E = 15 V , R G = 6.8 60 mWs 50 T yp. s witc hing los s es E = f (R G ) , inductive load , T j = 125C par.: V C E = 600V , V G E = 15 V , I C = 100 A 40 E on E mWs E on E 45 40 30 25 35 30 25 15 20 15 10 5 5 0 0 50 100 150 A 250 0 0 10 20 30 40 20 E off E off 10 IC 60 RG Sirectifier R SII100N12 NPT IGBT Modules F orward c harac teris tic s of fas t rec overy revers e diode IF = f(V F ) parameter: T j 200 A Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 Diode K/W ZthJC IF 160 140 120 10 -1 T j=125C 100 80 60 T j=25C 10 -2 D = 0.50 0.20 0.10 10 -3 0.05 single pulse 0.02 0.01 40 20 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Sirectifier R |
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